# Perturbative approach to the capacitive interaction between a sensor   quantum dot and a charge qubit

**Authors:** S. Mojtaba Tabatabaei

arXiv: 1704.02725 · 2017-07-12

## TL;DR

This paper develops a perturbative method using non-equilibrium Green's functions to analyze the capacitive interaction between a charge qubit and a sensor quantum dot, revealing how qubit states influence conductance.

## Contribution

It introduces a second-order perturbative approach with self-consistent Green's functions and Majorana fermion representation to study qubit-dot interactions at finite bias.

## Key findings

- Linear relation between qubit isospin expectation and quantum dot conductance.
- Maximal effect of qubit on conductance occurs at zero bias voltage.
- Analytical expression for conductance behavior with respect to qubit parameters.

## Abstract

We consider the capacitive interaction between a charge qubit and a sensor quantum dot(SQD) perturbatively to the second order of their coupling constant at zero temperature by utilizing the method of non-equilibrium Green's functions together with infinite-U Lacroix approximation and employing Majorana fermion representation for qubit isospin operators. The effect of back-actions on dynamics of the system is taken into account by calculating the self-energies and the Green's functions in a self-consistent manner. To demonstrate the applicability of the method, we investigate relevant physical quantities of the system at zero and finite bias voltages. In the regime of weak SQD-qubit coupling, we find a linear relation between the stationary-state expectation values of the third component of the qubit isospin vector, $\left\langle \tau_{3}\right\rangle $, and the differential conductance of the SQD. Furthermore, our numerical results predict that the effect of SQD-qubit coupling on differential conductance of the SQD should be maximized at zero bias voltage. Moreover, we obtain an analytical expression to describe the behavior of the differential conductance of the SQD with respect to the qubit parameters. Our results at zero bias voltage are consistent with the results of numerical renormalization group method.

## Full text

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## Figures

6 figures with captions in the complete paper: https://tomesphere.com/paper/1704.02725/full.md

## References

49 references — full list in the complete paper: https://tomesphere.com/paper/1704.02725/full.md

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Source: https://tomesphere.com/paper/1704.02725