# Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal

## TL;DR

This study investigates the magnetoresistance and Fermi surface of Sb$_2$Se$_2$Te single crystals, revealing large, non-saturating MR and three Fermi surface pockets with trivial topology, relevant for electronic applications.

## Contribution

The paper provides the first detailed analysis of the magnetotransport properties and Fermi surface topology of Sb$_2$Se$_2$Te single crystals, including SdH oscillations and Berry phase calculations.

## Key findings

- Magnetoresistance reaches 1100% at 31 T with no saturation.
- Three Fermi surface pockets identified via SdH oscillations.
- Confirmed trivial topology of the prominent Fermi pocket.

## Abstract

We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at $B$=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $\alpha$=32 T, $\beta$=80 T and $\gamma$=117 T indicating the presence of three Fermi surface pockets. Among these frequencies, $\beta$ is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence $\beta$ and Berry phase calculations, we have confirmed the trivial topology of the $\beta$-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be $m^{*}_{\beta}=0.16m_o$ and $m^{*}_{\gamma}=0.63m_o$ for the $\beta$ and $\gamma$ bands respectively. Large MR of Sb$_2$Se$_2$Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.