Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence
Chenwei Tang, Shuai Jia, Weibing Chen, Jun Lou, Dmitri V. Voronine
TL;DR
This study demonstrates nanoscale resolution imaging of monolayer MoSe2 using tip-enhanced photoluminescence, enabling precise band gap characterization and revealing spatial variations and edge effects.
Contribution
It introduces a high-resolution TEPL technique for monolayer MoSe2, improving band gap analysis beyond conventional methods.
Findings
Nanoscale spatial resolution of PL in MoSe2 achieved
Observed PL shifts at edges indicating local band gap variations
Analyzed spatial dependence of TEPL enhancement factors
Abstract
Band gap tuning in two-dimensional transitional metal dichalcogenides (TMDs) is crucial in fabricating new optoelectronic devices. High resolution photoluminescence (PL) microscopy is needed for accurate band gap characterization. We performed tip-enhanced photoluminescence (TEPL) measurements of monolayer MoSe2 with nanoscale spatial resolution, providing an improved characterization of the band gap correlated with the topography compared with the conventional far field spectroscopy. We also observed PL shifts at the edges and investigated the spatial dependence of the TEPL enhancement factors.
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Taxonomy
Topics2D Materials and Applications · Quantum Dots Synthesis And Properties · Plasmonic and Surface Plasmon Research