# Giant Zeeman splitting inducing near-unity valley polarization in van   der Waals heterostructures

**Authors:** Philipp Nagler, Mariana V. Ballottin, Anatolie A. Mitioglu, Fabian, Mooshammer, Nicola Paradiso, Christoph Strunk, Rupert Huber, Alexey, Chernikov, Peter C. M. Christianen, Christian Sch\"uller, and Tobias Korn

arXiv: 1704.02208 · 2017-11-17

## TL;DR

This paper demonstrates magnetic control of valley polarization in van der Waals heterostructures, achieving near-unity polarization through giant Zeeman splitting of interlayer excitons, advancing valleytronics applications.

## Contribution

It reports the first direct magnetic manipulation of valley polarization in a WSe2/MoSe2 heterostructure using giant Zeeman splitting, enabling near-unity polarization of long-lived excitons.

## Key findings

- Giant valley Zeeman splitting with a g factor of -15.
- Near-unity valley polarization achieved under magnetic fields.
- Long exciton lifetimes of 100 ns maintained during polarization.

## Abstract

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for information processing stimulated concerted research activities towards the concept of valleytronics , maintaining control over spin-valley polarization proved challenging in individual monolayers. A promising alternative route explores type II band alignment in artificial van der Waals heterostructures. The resulting formation of interlayer excitons combines the advantages of long carrier lifetimes and spin-valley locking . Here, we demonstrate direct magnetic manipulation of valley polarization in a WSe2/MoSe2 heterostructure through giant valley Zeeman splitting of interlayer transitions. Remarkably, even after non-selective injection, the observed $g$ factor as large as $-15$ induces near-unity polarization of long-lived excitons with 100 ns lifetimes under magnetic fields. The demonstrated control of the spin-valley physics highlights the exceptional aspects of novel, artificially designed material systems and their promise for atomically-thin valleytronic devices.

## Full text

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## Figures

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## References

30 references — full list in the complete paper: https://tomesphere.com/paper/1704.02208/full.md

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Source: https://tomesphere.com/paper/1704.02208