Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition
Subrata Ghosh, K. Ganesan, S. R. Polaki, S. Ilango, S. Amirthapandian,, S. Dhara, M. Kamruddin, and A. K. Tyagi

TL;DR
This study demonstrates how plasma-enhanced chemical vapor deposition can be used to control the growth orientation of nanographitic structures by adjusting the gas mixture, affecting their morphology and structural quality.
Contribution
It introduces a method to tune nanographitic structure morphology from planar to vertical by controlling gas dilution ratios during plasma-enhanced CVD.
Findings
Vertical graphene nanosheets are favored by Ar-rich conditions.
Planar films are promoted by H2-rich conditions.
Dilution improves structural quality and turbostratic nature of NGSs.
Abstract
Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. Field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy are used to study the structural and morphological features of the grown films. Herein, we demonstrate, how the morphology can be tuned from planar to vertical structure using single control parameter namely, dilution of CH4 with Ar and/or H2. Our results show that the competitive growth and etching processes dictate the morphology of the NGSs. While Ar-rich composition favors vertically oriented graphene nanosheets, H2-rich composition aids growth of planar films. Raman analysis reveals dilution of CH4 with either Ar…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
