# Ehrlich-Schwoebel Effect on the Growth Dynamics of GaAs(111)A surfaces

## TL;DR

This paper investigates how the Ehrlich-Schwoebel barrier influences the growth and surface roughness of GaAs(111)A, leading to optimized flat surfaces with record low emission linewidths in quantum wells.

## Contribution

It introduces a theoretical growth model emphasizing the Ehrlich-Schwoebel barrier's role and identifies conditions for achieving atomically flat GaAs(111)A surfaces.

## Key findings

- Growth model accurately describes surface behavior.
- Optimized conditions yield surfaces with <0.2 nm roughness.
- Record low emission linewidth of 4.5 meV in quantum wells.

## Abstract

We present a detailed characterization of the growth dynamics of Ga(Al)As(111)A surfaces. We develop a theoretical growth model that well describes the observed behavior on the growth parameters and underlines the Ehrlich-Schwoebel barrier as leading factor that determines the growth dynamics. On such basis we analyze the factors that lead to the huge observed roughness on such surface orientations and we identify the growth conditions that drive the typical three-dimensional growth of Ga(Al)As(111)A towards atomically flat surface. GaAs/AlGaAs quantum wells realized on optimized surface (<0.2 nm roughness) show a record low emission linewidth of 4.5 meV.