# Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

## TL;DR

This paper introduces a novel non-volatile electrostatic gating method using charged polymers to effectively tune the carrier density of topological insulator Bi2Se3, achieving stable Fermi level control and enhanced electron mobility.

## Contribution

It presents the first use of charged polymer gating to modulate the charge density in topological insulators without continuous gate connection or chemical modification.

## Key findings

- Fermi level shifted close to the Dirac point
- Surface chemical potential lowered into the bulk band gap
- Electron mobility enhanced to ~1600 cm^2/Vs at 5K

## Abstract

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2Se3 is shifted towards the Dirac point with this method. Using THz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (~ 50 meV above the Dirac point and 170 meV below the conduction band minimum) and it is stabilized in the intrinsic regime while enhancing electron mobility. This represents the first use of a charged polymer gate for modulating TI charge density. The mobility of surface state electrons is enhanced to a value as high as ~1600 cm^2/Vs at 5K.