Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances

TL;DR

This paper introduces a small-signal model for 2D-material FETs that incorporates non-reciprocal capacitances and charge conservation, enabling accurate RF performance predictions and parameter extraction from S-parameters.

Contribution

It provides a novel small-signal equivalent circuit with explicit analytical expressions and a parameter extraction method for 2D-material FETs considering non-reciprocal capacitances and extrinsic resistances.

Findings

Model accurately predicts RF figures of merit.

Explicit expressions facilitate device analysis.

Method extracts intrinsic and extrinsic parameters from measurements.

Abstract

A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain/source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional field-effect transistors.