A review for compact model of graphene field-effect transistors

TL;DR

This review paper discusses the development and theoretical modeling of compact models for graphene field-effect transistors, emphasizing various approaches like charge sheet, drift-diffusion, and surface-potential models, and provides future outlooks.

Contribution

It offers a comprehensive theoretical overview of current compact models for graphene FETs, highlighting key modeling techniques and future research directions.

Findings

Analysis of charge sheet and drift-diffusion models

Evaluation of Boltzmann equation and DOS approaches

Discussion on surface-potential-based models

Abstract

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.