Titanium oxynitride thin films with tunable double epsilon-near-zero behaviour
Laurentiu Braic, Nikolaos Vasilantonakis, Andrei P. Mihai, Ignacio J., Villar Garcia, Sarah Fearn, Bin Zou, Brock Doiron, Rupert F. Oulton, Lesley, Cohen, Stefan A. Maier, Neil McN. Alford, Anatoly V. Zayats, Peter K., Petrov

TL;DR
This paper reports the fabrication and optical characterization of titanium oxynitride thin films that exhibit tunable double epsilon-near-zero behaviour, with potential applications in photonics.
Contribution
It introduces a method to produce TiOxNy films with controllable double ENZ properties based on residual oxygen levels during deposition.
Findings
Double ENZ behaviour observed in films with specific residual oxygen levels.
Tunable ENZ wavelengths in the 700-850 nm and 1100-1350 nm ranges.
Double ENZ linked to TiN and TiOxNy/TiOx phase mixture.
Abstract
Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and their optical properties are presented. The films grown when the level of residual Oxygen in the background vacuum was between 5E-9Torr to 20E-9Torr exhibit double Epsilon-Near-Zero (2-ENZ) behaviour with ENZ1 and ENZ2 wavelengths tunable in the 700-850 nm and in the 1100-1350 nm spectral ranges, respectively. Samples fabricated when the level of residual Oxygen in the background vacuum was above 2E-8Torr exhibit non-metallic behaviour, while the layers deposited when the level of residual Oxygen in the background vacuum was below 5E-9Torr, show metallic behaviour with a single ENZ value. The double ENZ phenomenon is related to the level of residual Oxygen in the background vacuum and is attributed to the mixture of TiN and TiOxNy/TiOx…
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