A comparative study of resists and lithographic tools using the Lumped Parameter Model

TL;DR

This study compares high-resolution lithographic tools using the Lumped Parameter Model, analyzing their efficiency, contrast, and patterning performance on different resists under identical conditions.

Contribution

It introduces a quantitative comparison of lithographic tools using the Lumped Parameter Model, incorporating experimental data and tool-specific secondary electron yields.

Findings

Electron beam lithography shows higher contrast than EUV lithography.

The Lumped Parameter Model accurately predicts critical dimensions based on experimental data.

Resist contrast varies with tool-specific secondary electron yields.

Abstract

A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion beam lithography tools on two different resists that are processed under the same conditions. The dose-to-clear and the lithographic contrast are determined experimentally and are used to compare the relative efficiency of each tool. The results are compared to previous studies and interpreted in the light of each tool-specific secondary electron yield. In addition, the patterning performance is studied by exposing dense line/spaces patterns and the relation between critical dimension and exposure dose is discussed. Finally, the Lumped Parameter Model is employed in order to quantitatively estimate the critical dimension of line/spaces, using each tool specific aerial image. Our implementation is then validated by fitting the model to the experimental data from interference lithography exposures, and extracting the resist contrast.