P-N junctions dynamics in graphene channel induced by ferroelectric domains motion

TL;DR

This paper investigates how ferroelectric domain dynamics influence p-n junction behavior in graphene channels, revealing size effects, hysteresis phenomena, and potential applications in advanced electronic modulators.

Contribution

It introduces a self-consistent model combining Landau-Ginzburg-Devonshire theory with electrostatics to analyze ferroelectric-graphene interactions and demonstrates the potential for novel graphene-based electronic devices.

Findings

Size effect influences graphene conductivity based on channel length.

Low gate voltages induce hysteresis in ferroelectric polarization and graphene charge.

Nonlinear hysteresis with a wide memory window observed at high gate voltages.

Abstract

The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. We revealed the extrinsic size effect in the dependence of the graphene channel conductivity on its length. For the case of perfect electric contact between the ferroelectric and graphene, relatively low gate voltages are required to induce the pronounced hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. We predict that the considered nano-structure "top gate/dielectric layer/graphene channel/ferroelectric substrate" can be a promising candidate for the fabrication of new generation of modulators and rectifiers based on the graphene p-n junctions.