Electrical detection of magnetic states in crossed nanowires using the topological Hall effect

TL;DR

This study demonstrates that the topological Hall effect can be used to detect magnetic states in crossed nanowires, providing a potential method for multi-value memory devices by measuring spin chirality-related magnetic properties.

Contribution

The paper introduces a micromagnetic simulation approach to show how the topological Hall effect depends on both polarity and vorticity in crossed nanowires, enabling magnetic state detection.

Findings

Topological Hall effect depends on both polarity and vorticity.

Measurement of the topological Hall effect can detect magnetic states.

Potential application in multi-value memory devices.

Abstract

We used micromagnetic simulations to investigate the spatial distributions of the effective magnetic fields induced by spin chirality in crossed nanowires with three characteristic magnetic structures: a radiated-shape, an antivortex, and a uniform-like states. Our results indicate that, unlike the anomalous Hall effect, the topological Hall effect (which is related to the spin chirality) depends on both the polarity and the vorticity. Therefore, measuring the topological Hall effect can detect both the polarity and the vorticity simultaneously in crossed nanowires. This approach may be suitable for use as an elemental technique in the quest for a next-generation multi-value memory.