# Role of Charge Traps in the Performance of Atomically-Thin Transistors

## TL;DR

This paper investigates how charge traps affect the performance of atomically thin MoTe2 transistors, introducing a new model to better understand and predict their hysteretic behavior for improved device design.

## Contribution

A novel charge trapping model that explains transient current behavior and threshold voltage changes in atomically thin transistors.

## Key findings

- Charge traps significantly influence transient currents.
- The model accurately predicts hysteresis behavior.
- Applicable to a broad class of atomically thin devices.

## Abstract

Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic devices.