All-electrical control of donor-bound electron spin qubits in silicon

TL;DR

This paper introduces an all-electrical method for controlling donor-bound electron spin qubits in silicon, enabling precise spin manipulation and coupling through electric fields and hyperfine interactions, with detailed modeling for device design.

Contribution

It presents a novel electrical control scheme for donor-based spin qubits in silicon, utilizing hyperfine coupling differences and atomistic modeling for device optimization.

Findings

Demonstrates electric spin control via hyperfine coupling differences.

Provides quantitative design guidelines through atomistic modeling.

Shows potential for scalable silicon-based quantum computing.

Abstract

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an electric dipole between them and applying an alternating electric field generated by in-plane gates. These qubits can be coupled with exchange interaction controlled by top detuning gates. The qubit device can be fabricated deep in the silicon lattice with atomic precision by scanning tunneling probe technique. We have combined a large-scale full band atomistic tight-binding modeling approach with a time-dependent effective Hamiltonian description, providing a design with quantitative guidelines.