# Analytical Model of One-Dimensional Ballistic Schottky-Barrier Transistors

## TL;DR

This paper introduces an analytical model for one-dimensional ballistic Schottky-Barrier transistors using the WKB approximation, enabling accurate drain current predictions at high biases, aligning well with experimental data.

## Contribution

It presents a novel analytical approach that overcomes previous model limitations, extending applicability to high bias voltages in nanoscale transistors.

## Key findings

- Model accurately predicts drain current at high biases.
- Simulation results agree with experimental data for sub-10-nm CNTFETs.
- Extends analytical modeling capabilities for ballistic transistors.

## Abstract

A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub-10-nm CNTFETs.