# Thermal-error regime in high-accuracy gigahertz single-electron pumping

## TL;DR

This paper demonstrates high-accuracy gigahertz single-electron pumping using a silicon quantum dot, achieving near-ideal current with very low measurement uncertainty, and explores the thermal-error regime affecting the process.

## Contribution

It provides the first experimental demonstration of high-accuracy single-electron pumping in the thermal-error regime with traceability to primary standards.

## Key findings

- Pump current matches ideal value within 0.27 ppm uncertainty.
- Operates at 1 GHz without magnetic field.
- Thermal distribution influences electron trapping in the quantum dot.

## Abstract

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a \mbox{$1$-GHz} sinusoidal wave in the absence of magnetic field, is equal to the ideal value of $ef$ within a measurement uncertainty as low as $0.27$~ppm.