# Detection and control of spin-orbit interactions in a GaAs hole quantum point contact

## TL;DR

This paper explores how spin-orbit interactions in GaAs hole quantum point contacts can be detected and controlled, revealing their dependence on crystal orientation and magnetic field, with implications for spintronics.

## Contribution

It provides the first combined theoretical and experimental analysis of Rashba and Dresselhaus SOIs in GaAs hole QPCs, demonstrating tunable anti-crossing gaps.

## Key findings

- Anti-crossing gaps depend on SOI interplay and g tensor anisotropy.
- Crystal orientation influences SOI effects and their tunability.
- Independent detection and control of Dresselhaus and Rashba SOIs achieved.

## Abstract

We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.