# Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

## TL;DR

This study explores the interplay of weak localization and weak antilocalization effects in amorphous indium-gallium-zinc-oxide thin-film transistors, showing how gate voltage and temperature can control quantum interference phenomena.

## Contribution

It demonstrates controllable quantum interference competition in amorphous IGZO transistors through gate voltage and temperature tuning.

## Key findings

- Observation of weak localization at small magnetic fields
- Control of localization effects via gate voltage and temperature
- Evidence of quantum interference competition in amorphous IGZO

## Abstract

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.