# Temperature induced transition from p-n to n-n electronic behavior in Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction

## TL;DR

This study investigates how temperature causes a Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction to transition from p-n to n-n electronic behavior, revealing temperature-dependent charge transport mechanisms.

## Contribution

It demonstrates a temperature-induced transition in heterojunction behavior and clarifies the underlying mechanisms through Hall measurements.

## Key findings

- At 10 K, the heterojunction exhibits p-n behavior.
- At 100 K, it transitions to n-n behavior.
- Hall measurements confirm the role of electronegativity and impurity ionization.

## Abstract

The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its characteristics become similar to that of an n-n junction. The reason for the same is attributed to the role of larger electronegativity of Ni as compared to Mg at 10 K and ionization of impurity states at 100 K. The above behavior is confirmed by performing the Hall measurements.