# Quantum reading capacity: General definition and bounds

## TL;DR

This paper defines the quantum reading capacity with adaptive strategies, establishes bounds, and calculates capacities for specific memory models, highlighting the advantage of adaptivity in zero-error scenarios.

## Contribution

It introduces a general definition of quantum reading capacity allowing adaptive operations and derives bounds and capacities for various quantum memory models.

## Key findings

- Derived bounds on quantum reading capacity.
- Calculated capacities for thermal, erasure, and depolarizing memory cells.
- Showed the advantage of adaptive strategies in zero-error quantum reading.

## Abstract

Quantum reading refers to the task of reading out classical information stored in a read-only memory device. In any such protocol, the transmitter and receiver are in the same physical location, and the goal of such a protocol is to use these devices (modeled by independent quantum channels), coupled with a quantum strategy, to read out as much information as possible from a memory device, such as a CD or DVD. As a consequence of the physical setup of quantum reading, the most natural and general definition for quantum reading capacity should allow for an adaptive operation after each call to the channel, and this is how we define quantum reading capacity in this paper. We also establish several bounds on quantum reading capacity, and we introduce an environment-parametrized memory cell with associated environment states, delivering second-order and strong converse bounds for its quantum reading capacity. We calculate the quantum reading capacities for some exemplary memory cells, including a thermal memory cell, a qudit erasure memory cell, and a qudit depolarizing memory cell. We finally provide an explicit example to illustrate the advantage of using an adaptive strategy in the context of zero-error quantum reading capacity.