# Gate tunable parallel double quantum dot in InAs double-nanowire junctions

## TL;DR

This paper demonstrates the fabrication and measurement of a gate-tunable parallel double quantum dot system in InAs nanowire junctions, enabling advanced quantum experiments like Cooper-pair splitting.

## Contribution

It introduces a novel fabrication technique for parallel double quantum dots in InAs nanowires with tunable electrostatic coupling.

## Key findings

- Confirmed formation of parallel double quantum dots in InAs nanowires.
- Achieved tunable electrostatic coupling between the quantum dots.
- Device fabrication method enables future quantum experiments.

## Abstract

We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each NW, with a finite electrostatic coupling between each other. With the fabrication technique established in this study, devices proposed for more advanced experiments, such as Cooper-pair splitting and the observation of parafermions, can be realized.

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Source: https://tomesphere.com/paper/1703.03559