# Resistive Switching in Memristive Electrochemical Metallization Devices

## TL;DR

This paper uses 3D kinetic Monte Carlo simulations to model resistive switching in Ag/TiO_x/Pt memristive devices, capturing filament formation and dissolution, and analyzing the effects of electric field and heat on switching behavior.

## Contribution

It introduces a coupled ion transport and electric/thermal field simulation model for memristive electrochemical devices, enabling detailed analysis of filament dynamics and switching kinetics.

## Key findings

- The model accurately describes filament formation and dissolution.
- Realistic current-voltage characteristics are obtained.
- Electric field and local heat significantly influence switching processes.

## Abstract

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device.