# Control of interlayer delocalization in 2H transition metal dichalcogenides

## TL;DR

This paper investigates how interlayer coupling in 2H transition metal dichalcogenides influences their electronic properties, revealing the conditions under which electrons and holes localize or delocalize across layers, with implications for device design.

## Contribution

It provides a detailed experimental and theoretical analysis of interlayer coupling effects, including the role of spin-orbit interaction and gate fields, and demonstrates quantitative agreement with quantum Stark effect measurements.

## Key findings

- Electrons and holes can localize or delocalize depending on interlayer coupling.
- Quantum Stark effect measurements agree with theoretical predictions.
- Intralayer excitons dominate photoluminescence in gated MoS2.

## Abstract

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.