Computing in Memory with Spin-Transfer Torque Magnetic RAM
Shubham Jain, Ashish Ranjan, Kaushik Roy, and Anand Raghunathan

TL;DR
This paper introduces STT-CiM, a novel in-memory computing architecture using Spin-Transfer Torque Magnetic RAM, enabling efficient logic and arithmetic operations directly within memory arrays to improve performance and energy efficiency.
Contribution
It proposes a new STT-CiM design leveraging spintronic memory properties, including circuit modifications, error correction, system integration, and data mapping techniques.
Findings
Achieves 3.93x average system performance improvement
Reduces memory energy by 3.83x on average
Supports complex vector operations within memory arrays
Abstract
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer Torque Magnetic RAM (STT-MRAM). The unique properties of spintronic memory allow multiple wordlines within an array to be simultaneously enabled, opening up the possibility of directly sensing functions of the values stored in multiple rows using a single access. We propose modifications to STT-MRAM peripheral circuits that leverage this principle to perform logic, arithmetic, and complex vector operations. We address the challenge of reliable in-memory computing under process variations by extending ECC schemes to detect and correct errors that occur during CiM operations. We also address the question of how STT-CiM should be integrated within a…
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Taxonomy
TopicsAdvanced Data Storage Technologies · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
