Response to Comment on 'Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic' (arXiv:1607.06690)

TL;DR

This paper analyzes and simulates the energy efficiency of MESO spintronic logic devices, demonstrating sub 10 attojoule switching energy and discussing design optimizations for scalability.

Contribution

It provides an analytical derivation and circuit simulations of MESO logic energy estimates, highlighting design strategies for ultra-low energy operation.

Findings

Sub 10 aJ switching energy demonstrated in simulations

Energy to switch capacitor and FE is independent of interconnect resistance

Material parameter space identified for scalable MESO devices

Abstract

In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it with time-domain circuit simulations using a self-consistent ferroelectric (FE) compact model. While the energy to charge a capacitor is dissipated in the interconnect and transistor resistance, we note that the energy to switch a capacitor and a FE is independent of the interconnect resistance value to the first order. Also device design can mitigate the parasitic energy losses. We further show the circuit simulations for a sub 10 aJ switching operation of a MESO logic device comprehending: a) Energy stored in multiferroic; b) Energy dissipation in the resistance of the interconnect, Ric ; c) Energy dissipation in the inverse spin-orbit coupling (ISOC) spin to charge converter Risoc; d) Supply, ground resistance, and transistor losses. We also identify the requirements for the resistivity of the spin-orbit coupling materials and address the effect of internal resistance of the spin to charge conversion layer. We provide the material parameter space where MESO (with a fan-out of 1 and interconnect) achieves sub 10 aJ switching energy with path for scaling via ferroelectric/magnetoelectric/spin-orbit materials development.