# Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers

## TL;DR

This study investigates how anisotropy influences antiferromagnetic spin rotation in epitaxial ferromagnet/antiferromagnet bilayers, revealing enhanced magnetoresistance effects and a new method for detecting AFM moments.

## Contribution

It demonstrates the impact of magnetocrystalline anisotropy on AFM rotation and introduces a straightforward approach to detect AFM moments in FM/AFM bilayers.

## Key findings

- Magnetoresistance curves show full and partial AFM rotation.
- Maximum resistance-change ratio exceeds that of single-layer films.
- AFM spin reorientation is governed by FM magnetocrystalline anisotropy.

## Abstract

We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet (AFM) Fe$_2$CrSi/Ru$_2$MnGe epitaxial bilayers using current-in-plane configurations. Above the critical thickness of the Ru$_2$MnGe layer to induce exchange bias, symmetric and asymmetric curves were observed in response to the direction of FM magnetocrystalline anisotropy. Because each magnetoresistance curve showed full and partial AFM rotation, the magnetoresistance curves imply the impact of the Fe$_2$CrSi magnetocrystalline anisotropy to govern the AFM rotation. The maximum magnitude of the angular-dependent resistance-change ratio of the bilayers is more than an order of magnitude larger than that of single-layer Fe$_2$CrSi films, resulting from the reorientation of AFM spins via the FM rotation. These results highlight the essential role of controlling the AFM rotation and reveal a facile approach to detect the AFM moment even in current-in-plane configurations in FM/AFM bilayers.