Size Dependence of Nanoscale Wear of Silicon Carbide
Chaiyapat Tangpatjaroen, David Grierson, Steve Shannon, Joseph E., Jakes, and Izabela Szlufarska

TL;DR
This study investigates how the nanoscale wear resistance of silicon carbide varies with contact size, revealing a transition from hardness-dominated to shear strength-dominated wear regimes, with implications for nanoscale material design.
Contribution
It demonstrates a size-dependent transition in wear mechanisms of silicon carbide, highlighting the importance of interfacial shear strength at small contact scales.
Findings
Larger tips show SiC more wear-resistant than Si, consistent with hardness.
Smaller tips reveal SiC less wear-resistant than Si, indicating a regime shift.
Interfacial shear strength of SiC exceeds that of Si, influencing wear behavior.
Abstract
Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native oxide layers. We discovered a transition in the relative wear resistance of the SiC samples compared to that of Si as a function of contact size. With larger nanoindenter tips (tip radius around 370 nm), the wear resistances of both sc-SiC and nc-SiC are higher than that of Si. This result is expected from the Archard's equation because SiC is harder than Si. However, with the smaller AFM tips (tip radius around 20 nm), the wear resistances of sc-SiC and nc-SiC are lower than that of Si, despite the fact that the contact…
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