Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

TL;DR

This study introduces a new characterization method combining Hall effect and split capacitance-voltage measurements to analyze how nitridation reduces interface trap density at SiO2/SiC interfaces near the conduction band edge.

Contribution

The paper presents a novel combined measurement technique for analyzing interface traps and demonstrates nitridation's effect in reducing trap density at SiO2/SiC interfaces.

Findings

Nitridation significantly reduces interface trap density near the conduction band edge.

A high density of traps remains even after nitridation.

The new method effectively characterizes trap states at the interface.

Abstract

The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.