Tunable Negative Differential Resistance in Planer Graphene Superlattice Resonant Tunneling Diode

TL;DR

This paper demonstrates controllable negative differential resistance with high peak-to-valley ratio in a planar graphene superlattice, enabling potential applications in electronic devices like resonant tunneling diodes and filters.

Contribution

It introduces a novel graphene superlattice structure exhibiting tunable NDR with high PVR at low biases, advancing graphene-based electronic device design.

Findings

High peak-to-valley ratio predicted

NDR observed at low biases

Potential for device applications like resonant tunneling diodes

Abstract

In this paper, we report on the controllable negative differential resistance (NDR) in a proposed planar graphene superlattice structure. High value of peak to valley ratio (PVR) is predicted. This is significant because of appearance of NDR with high PVR at low biases. Our finding is important since beside the other potential applications of the graphene, proposes implementation of the graphene based superlattice in electronic devices such as resonant tunneling diode and filters.