# Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

## TL;DR

This study reports the successful synthesis of high-quality Mn-doped Ba1-xKx(Zn1-yMny)2As2 thin films with out-of-plane easy-axis magnetic anisotropy, demonstrating stable air-inactive properties and improved electrical and magnetic performance at higher Mn doping levels.

## Contribution

It introduces a novel method for depositing high-quality, air-stable Mn-doped Ba1-xKx(Zn1-yMny)2As2 thin films with controlled magnetic anisotropy, advancing DMS thin film technology.

## Key findings

- Films with x=0.08 exhibit better electrical and magnetic properties.
- Strong out-of-plane magnetic anisotropy observed in certain films.
- Films remain inactive in air for over 90 hours.

## Abstract

Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.