# Characteristics of ferroelectric-ferroelastic domains in N{\'e}el-type skyrmion host GaV$_4$S$_8$

## TL;DR

This study investigates the ferroelectric domain structures in GaV₄S₈, a multiferroic material hosting N{\'e}el-type skyrmions, revealing lamellar domain patterns that could influence skyrmion control.

## Contribution

First detailed local-scale analysis of ferroelectric domains in GaV₄S₈ using piezoresponse force microscopy, linking domain structure to skyrmion formation.

## Key findings

- Lamellar ferroelectric domains aligned with (100) planes.
- Domain spacing ranges from 100 nm to 1.2 μm.
- Domain control may enable skyrmion manipulation.

## Abstract

GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{\'e}el-type magnetic skyrmions dressed with electric polarization. At T$_s$ = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T$_s$, ferroelectric domains are formed with the electric polarization pointing along any of the four $\left< 111 \right>$ axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the N{\'e}el-type skyrmion lattice emerging below T$_C$=13\:K, the characteristics of polar domains in GaV$_4$S$_8$ have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV$_4$S$_8$ using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 $\mu$m. We expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manupulation of N{\'e}el-type skyrmions.