High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction

TL;DR

This study demonstrates a CMOS-compatible non-diffusive reaction method to produce high-Curie temperature Mn 5 Ge 3 thin films with magnetic properties comparable to monocrystalline films, offering a promising approach for spintronic applications.

Contribution

The paper introduces a novel non-diffusive reaction technique for fabricating high-quality Mn 5 Ge 3 thin films with high Curie temperatures, compatible with standard CMOS processes.

Findings

NDR-mediated layers exhibit magnetic properties similar to C-doped Mn 5 Ge 3 C x films.

RD-mediated layers are comparable to MBE-grown monocrystalline Mn 5 Ge 3.

NDR is an efficient, CMOS-compatible method for high-quality magnetic thin films.

Abstract

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with $0.1 \leq x \leq 0.2.$ NDR appears as a CMOS-compatible efficient method to produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films.