Delta-doped Beta- Gallium Oxide Field Effect Transistor

TL;DR

This paper demonstrates the fabrication of a delta-doped Beta-Gallium Oxide FET using plasma-assisted molecular beam epitaxy, achieving high carrier density and low resistance for improved device performance.

Contribution

It introduces a novel delta doping technique in Beta-Gallium Oxide and applies it to create a high-performance FET with enhanced electrical characteristics.

Findings

Achieved low-resistance delta-doped layers with 83 cm^2/Vs mobility

Realized a FET with 292 mA/mm current and 27 mS/mm transconductance

Developed growth procedures for high Si incorporation in oxidizing environments

Abstract

We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/Vs, integrated sheet charge of 2.4x10^14 cm^-2). A single delta-doped sheet of carriers was employed as a channel to realize a field effect transistor with current ID,MAX =292 mA/mm and transconductance gM = 27 mS/mm.