Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials
Yonghui Zhang, Zengxia Mei, Shujuan Cui, Huili Liang, Yaoping Liu and, Xiaolong Du
TL;DR
This paper reports the fabrication of flexible, transparent, all-oxide field-effect diodes with high rectification ratios, suitable for optoelectronic applications, achieved through low-temperature processing and innovative device architecture.
Contribution
It introduces a novel low-temperature fabrication process for fully transparent oxide diodes using a diode-connected thin-film transistor architecture.
Findings
High rectification ratio of 5 x 10^8 achieved
Devices are optically transparent and mechanically robust
Diodes operate effectively under bending conditions
Abstract
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically bending. Distinguished from other diodes, these diodes utilize diode-connected thin-film transistor architecture and follow field-effect principles.
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