# Effect of uniaxial strain on the optical Drude scattering in graphene

## TL;DR

This study investigates how uniaxial strain affects the optical Drude scattering in graphene, revealing that strain increases scattering rates without changing the Fermi level, which impacts its optoelectronic properties.

## Contribution

The paper provides experimental data on the strain dependence of Drude scattering in graphene and discusses potential mechanisms, advancing understanding of strain effects in 2D materials.

## Key findings

- Scattering rate increases by over 10% per 1% strain
- Fermi level and Drude weight remain unchanged under strain
- Electronic mobility and optical absorption are strain-sensitive

## Abstract

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission spectra of large-area chemical-vapor deposited monolayer graphene on a polyethylene terephthalate substrate subjected to uniaxial strain. The effective strain value is calibrated using the Raman spectroscopy and corrected for a relaxation of wrinkles and folds seen directly by atomic-force microscopy. We find that while the Drude weight and the Fermi level remain constant, the scattering rate increases by more than 10% per 1% of applied strain, showing a high level of reproducibility during strain cycling. As a result, the electronic mobility and optical absorption of graphene at terahertz and lower frequencies appear to also be sensitive to strain, which opens pathways to control these key parameters mechanically. We suggest that such a functionality can be potentially used in flexible optoelectronic and microelectromechanical systems based on graphene. By combining our findings with existing theoretical models, we discuss the possible mechanisms of strain-controlled Drude scattering.