# Ultrafast doublon dynamics in photo-excited 1T-TaS$_2$

## TL;DR

This study uses time-resolved photoemission spectroscopy to observe ultrafast doublon dynamics in photo-excited 1T-TaS$_2$, revealing fundamental Mott physics and the influence of doping on electronic processes.

## Contribution

It demonstrates that doublon-hole recombination occurs on a 14 fs timescale and shows that electronic effects dominate despite strong electron-phonon coupling, with doping controlling the dynamics.

## Key findings

- Doublon-hole recombination time is approximately 14 fs.
- Dynamics are explained by the single band Hubbard model.
- Doping level significantly influences doublon dynamics.

## Abstract

Strongly correlated systems exhibit intriguing properties caused by intertwined microscopic in- teractions that are hard to disentangle in equilibrium. Employing non-equilibrium time-resolved photoemission spectroscopy on the quasi-two-dimensional transition-metal dichalcogenide 1T-TaS$_2$, we identify a spectroscopic signature of double occupied sites (doublons) that are reflects fundamental Mott physics. Doublon-hole recombination is estimated to occur on time scales of one electronic hopping cycle $\hbar/J\approx$ 14 fs. Despite strong electron-phonon coupling the dynamics can be explained by purely electronic effects captured by the single band Hubbard model, where thermalization is fast in the small-gap regime. Qualitative agreement with the experimental results however requires the assumption of an intrinsic hole-doping. The sensitivity of the doublon dynamics on the doping level provides a way to control ultrafast processes in such strongly correlated materials.