Test of UFSD Silicon Detectors for the TOTEM Upgrade Project

TL;DR

This paper evaluates the timing performance of Ultra Fast Silicon Detectors (UFSD) for the TOTEM upgrade, demonstrating timing precision between 30 ps and 100 ps depending on pixel capacitance and bias voltage.

Contribution

It provides experimental data on UFSD timing performance and the effects of pixel capacitance and bias voltage, aiding detector optimization for high-energy physics experiments.

Findings

Timing precision ranges from 30 ps to 100 ps.

Timing performance depends on pixel capacitance and bias voltage.

Optimal bias voltage improves timing accuracy.

Abstract

This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage.