# Preparing local strain patterns in graphene by atomic force microscope based indentation

## TL;DR

This paper introduces an atomic force microscope-based method to create controlled strain patterns in substrate-supported graphene, enabling new ways to tailor its electronic properties without lithography.

## Contribution

The authors develop a novel AFM-based technique for patterning strain in graphene, providing a versatile tool for mechanical property engineering.

## Key findings

- Strain patterns can be precisely induced in graphene using AFM indentation.
- The method allows for controlled and localized deformation of graphene.
- Potential applications in designing graphene-based electronic devices.

## Abstract

Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.