# Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

## TL;DR

This paper demonstrates the design and characterization of radiation-hard pixel sensors fabricated with 150 nm CMOS technology on high-resistive wafers, showing comparable performance to standard sensors even after high irradiation levels.

## Contribution

It introduces radiation-hard pixel sensors using 150 nm CMOS technology on high-resistive wafers, with successful testing before and after irradiation up to 1.1×10^{15} n_{eq} cm^{-2}.

## Key findings

- Sensors perform as well as standard sensors in noise and efficiency.
- AC-coupled sensors reach 100% hit efficiency before irradiation.
- Performance remains robust after high-fluence irradiation.

## Abstract

Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.