# Gate-tunable strong-weak localization transition in few-layer black phosphorus

## TL;DR

This study investigates how gate voltages can tune the transition between strong and weak localization in few-layer black phosphorus, revealing insights into charge transport mechanisms and electron interactions.

## Contribution

It demonstrates gate-controlled localization transition in few-layer BP and analyzes the underlying charge transport and electron-electron interactions.

## Key findings

- Hopping transport observed at low carrier density
- Negative magnetoresistance indicates weak localization at high density
- Phase coherence length follows a power-law temperature dependence

## Abstract

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier density regime. Variable-range hopping model is applied to simulate the charge carrier scattering behavior. In the high-carrier concentration regime, a negative magnetoresistance signals the weak localization effect. The extracted phase coherence length is power-law temperature dependent ($\sim T^{-0.48\pm0.03}$) and demonstrates electron-electron interactions in few-layer BP. The competition between the Strong localization length and phase coherence length is proposed and discussed based on the observed gate tunable strong-weak localization transition in few-layer BP.