# Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature

## TL;DR

This paper demonstrates room-temperature voltage-driven 180° magnetization switching in nanoheterostructures, using electric fields to modulate magnetic anisotropy and achieve fast, low-error spintronic device operation.

## Contribution

It introduces a novel charge-mediated switching mechanism controlled by electric fields, enabling fast and reliable 180° magnetization reversal at room temperature.

## Key findings

- Electric field induces giant modulation of magnetic anisotropy.
- Both in-plane and perpendicular 180° switching achieved with electric pulses.
- Fast switching (~4 ns) with low error probability at room temperature.

## Abstract

Voltage-driven 180$^\circ$ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180$^\circ$ magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field ($E$) induced interface charge is found to allow a giant modulation of the magnetic anisotropy ($K$) of the nanomagnet. Particularly $K$ is revealed to vary linearly with respect to $E$ and the epitaxial strain. Magnetization dynamics simulations using the so-obtained $K$ show that both in-plane and perpendicular 180$^\circ$ switching can be achieved by $E$ pulses. The temperature effect renders the 180$^\circ$ switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180$^\circ$ switching achievable at room temperature by controlling the magnitude of $E$ and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.