Optimal doping of the diode current interrupters

TL;DR

This paper presents an analytical method to optimize dopant distribution in diode current interrupters, significantly reducing energy losses during recovery by up to 55% compared to standard designs.

Contribution

It introduces an analytical solution for dopant distribution optimization, achieving substantial energy loss reduction in diode interrupters.

Findings

Optimized dopant distribution reduces energy losses by 30-55%.

Analytical solution enables improved diode interrupter performance.

Close-to-optimal doping profiles identified for minimal energy dissipation.

Abstract

An analytical solution to the problem of decreasing the energy losses $\Omega$ in diode current interrupters during recovery of the blocking ability by optimizing dopant distribution $N(x)$ over structure thickness has been obtained. It was found the distribution $N(x)$ close to optimal one that decreases $\Omega$ by 30-55% compared with standard interrupters with uniformly doped high-resistivity layers.