# Structure and Magnetization of Co4N Thin Film

## TL;DR

This study investigates the structure and magnetic properties of Co4N thin films, revealing enhanced magnetic moments and high spin polarization due to nitrogen incorporation, with optimized growth conditions achieving theoretical lattice parameters.

## Contribution

The paper presents the first detailed analysis of Co4N thin films' structure and magnetization, demonstrating improved magnetic properties through optimized sputtering conditions.

## Key findings

- Co4N films exhibit larger magnetic moments than pure Co.
- Nitrogen incorporation expands the lattice and enhances magnetic properties.
- Optimized growth yields lattice parameters close to theoretical predictions.

## Abstract

In this work, we studied the local structure and the magnetization of Co4N thin films deposited by a reactive dc magnetron sputtering process. The interstitial incorporation of N atoms in a fcc Co lattice is expected to expand the structure and such expansion yields interesting magnetic properties characterized by a larger than Co magnetic moment and a very high value of spin polarization ratio in Co4N. By optimizing the growth conditions, we prepared Co4N film having lattice parameter close to its theoretically predicted value. The N concentration was measured using secondary ion mass spectroscopy. Detailed magnetization measurements using bulk magnetization method and polarized neutron reflectivity confirm that the magnetic moment of Co in Co4N is higher than that of Co.