# An instrument for advanced in situ x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

## TL;DR

This paper introduces an advanced in situ x-ray instrument designed for real-time analysis of III-nitride film growth via MOVPE, leveraging synchrotron technology for atomic-scale insights.

## Contribution

The paper presents a novel instrument with high precision, stability, and wide angular access, enabling new coherent x-ray techniques during MOVPE growth.

## Key findings

- Enables in situ atomic-scale surface and film analysis.
- Supports coherent x-ray methods like diffraction and imaging.
- Provides fundamental insights into MOVPE processes.

## Abstract

We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.