# Unified modelling of the thermoelectric properties in SrTiO3

## TL;DR

This paper develops a realistic theoretical model for thermoelectric transport in electron-doped SrTiO3, successfully matching experimental data across various conditions and dopants, offering a new approach to optimize oxide thermoelectrics.

## Contribution

It introduces a comprehensive tight binding model including scattering processes for SrTiO3, enabling accurate predictions of thermoelectric properties across different doping levels and temperatures.

## Key findings

- Model agrees with experimental data over wide temperature and doping ranges.
- Results are insensitive to the type of dopant used.
- Provides a new framework for exploring thermoelectric improvements in oxides.

## Abstract

Thermoelectric materials are opening a promising pathway to address energy conversion issues governed by a competition between thermal and electronic transport. Improving the efficiency is a difficult task, a challenge that requires new strategies to unearth optimized compounds. We present a theory of thermoelectric transport in electron doped SrTiO3, based on a realistic tight binding model that includes relevant scattering processes. We compare our calculations against a wide panel of experimental data, both bulk and thin films. We find a qualitative and quantitative agreement over both a wide range of temperatures and carrier concentrations, from light to heavily doped. Moreover, the results appear insensitive to the nature of the dopant La, B, Gd and Nb. Thus, the quantitative success found in the case of SrTiO3, reveals an efficient procedure to explore new routes to improve the thermoelectric properties in oxides.