# Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures

## TL;DR

This study demonstrates Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures, revealing disorder effects and showcasing the universality of HIRO in diverse 2D materials, even with lower mobility and higher density.

## Contribution

First observation of HIRO in MgZnO/ZnO heterostructures, establishing their universality and sensitivity to disorder in low-mobility 2D systems.

## Key findings

- HIRO observed in MgZnO/ZnO heterostructures
- Mobility limited by impurities near the 2D channel
- HIRO applicable to systems with lower mobility and higher density

## Abstract

We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the 2D channel. Demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems, highlights remarkable universality of the phenomenon and its great promise to be used in studies of a wide variety of emerging 2D materials.