# Fine structure of high-power microwave-induced resistance oscillations

## TL;DR

This paper investigates the detailed fine structure of microwave-induced resistance oscillations in ultraclean 2D electron gases, revealing multiphoton-assisted scattering effects and providing a new method to analyze disorder properties.

## Contribution

It uncovers the origin of the fine structure in MIROs from multiphoton processes and introduces a way to distinguish disorder contributions in high-quality 2D systems.

## Key findings

- Observation of multiple secondary extrema in MIROs at high power
- Identification of multiphoton-assisted scattering as the origin of fine structure
- Method to separate short- and long-range disorder contributions

## Abstract

We report on observation of a fine structure of microwave-induced resistance oscillations in an ultraclean two-dimensional electron gas. This fine structure is manifested by multiple secondary sharp extrema, residing beside the primary ones, which emerge at high radiation power. Theoretical considerations reveal that this fine structure originates from multiphoton-assisted scattering off short-range impurities. Unique properties of the fine structure allow us to access all experimental parameters, including microwave power, and to separate different contributions to photoresistance. Furthermore, we show that the fine structure offers a convenient means to quantitatively assess the correlation properties of the disorder potential in high-quality systems, allowing separation of short- and long-range disorder contributions to the electron mobility.