N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials

TL;DR

This paper demonstrates the use of 2D material contacts to inject n- and p-type carriers into WSe2, showing low Schottky barriers and highlighting potential for high-performance electronic devices.

Contribution

It introduces a novel method of forming van der Waals contacts with 2D materials on WSe2, avoiding traditional metal evaporation techniques.

Findings

Low Schottky barrier heights for both n- and p-type contacts

Successful transfer of 2D metals onto WSe2 to form vdW contacts

Potential for high-performance 2D electronic devices

Abstract

We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these contacts, we demonstrated a small Schottky barrier height for both carrier polarities. Our finding reveals the potential of a high-performance vdW metal/semiconductor contact for use in electronics applications.