Photodetectors based on junctions of Two-Dimensional Transition metal dichalcogenides

TL;DR

This review discusses the development and properties of photodetectors based on junctions of two-dimensional transition metal dichalcogenides, highlighting various junction types and their potential applications.

Contribution

It provides a comprehensive analysis of different TMDC junctions for photodetectors, including homojunctions and heterojunctions, and compares their advantages and disadvantages.

Findings

Homojunctions can be created by doping and gating.

Heterojunctions involve TMDCs with other 2D or conventional semiconductors.

Different junction types have distinct advantages and limitations.

Abstract

Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorptions from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.